Electron microscopy
 
Identification of Resistive/High Ohmic Contacts in ICs
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Locally high ohmic contacts in a flip chip device had been identified by backside inspection with LIT as shown in Figure 4903. A mechanical cross section and SEM investigations were able to confirm the root cause which is an additional insulator layer infiltration in the contact area [1].

Locally high ohmic contacts in a flip chip device

Figure 4903. (a) Optical image of a flip chip device, (b) LIT image shows thermally active area, and (c) SEM image of a contact cross section showing additional insulator layer (denoted by red arrows). [2]


 

 

 

 

 

 

[1] Schmidt, C., Simon, M., and Altmann, F., "Failure Analysis of Stacked-die Devices by Combining Non-destructive Localization and Target Preparation Methods", Proc 3.5th Intl Symposium for Testing and Failure Analysis (ISTFA), 2009.
[2] Paiboon Tangyunyong and Christian Schmidt, Thermal Defect Detection Techniques, Sandia National Laboratories is a multimission laboratory managed and operated by National Technology & Engineering Solutions of Sandia, LLC, a wholly owned subsidiary of Honeywell International Inc., for the U.S. Department of Energy’s National Nuclear Security Administration under contract DE-NA0003525.

 

 

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