Electron microscopy
 
Localization of Residues/Underetch of Conductive Materials in ICs
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Figure 4904 shows the overlay images of optical images (grey) and actual LIT images (in color) of a faulty device, taken at a lock-in frequency of 10 Hz using a 2.5 X objective and allowing the display of the whole die. One of the point-like thermal signals was identified as defect-related thermal emission by comparing the heat dissipation of the defective device to a reference. The localization of the fault allowed a FIB preparation of a cross-section specimen for a scanning electron microscopy (SEM) investigation. The SEM image in Figure 4904 (d) shows a residue of a TiN barrier layer which were not completely etched away (denoted by a red arrow) leading to a short.

a residue of a TiN barrier layer which were not completely etched away (denoted by a red arrow) leading to a short

Figure 4904. (a) Overlay image (optical and LIT) of the whole die (2.5 X objective), (b) higher-magnification image (5X objective) of the dashed-rectangle region in (a), (c) highest-magnfflcation
image of the region shown in (b) using 5X objective with with a silicon solid immersion lens (SIL) using the lock-in frequency of 25 Hz, and (d) SEM image of a cross section through the defect site. [1]

 

 

 

 

 

 

 

[1] Paiboon Tangyunyong and Christian Schmidt, Thermal Defect Detection Techniques, Sandia National Laboratories is a multimission laboratory managed and operated by National Technology & Engineering Solutions of Sandia, LLC, a wholly owned subsidiary of Honeywell International Inc., for the U.S. Department of Energy’s National Nuclear Security Administration under contract DE-NA0003525.

 

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