Electron microscopy
 
Comparison between Lock-in Thermography (LIT)
and Photo Emission Microscopy (PEM)
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Table 4915. Comparison between lock-in thermography (LIT)  and photo emission microscopy (PEM) (e.g. laser based techniques).

 
LIT
PEM
Advantage

Able to detect low energy emissions at longer wavelengths generated by resistive heating [2-6]

Better resolution and ease of detecting many failures

Disadvantage  

Creates more challenge in failure analysis due to smaller dimension and reduced power consumption of basic components like transistors [1]

Range of wavelength sensitivity

Enhanced Lock-In Thermal Emission (ELITE) with an Indium Antimonide (InSb) detector: MWIR range (3 – 5 μm wavelength) PEM of Hamamatsu iPhemos with an Indium Gallium Arsenide (InGaAs) detector: NIR to SWIR range (0.8 – 1.8 μm wavelength)

Range of wavelength sensitivity

[7]

Examples
The observed defect: (a) optical and (b) superimposed LIT image
The area on the chip: (a) LIT, and (b) PEM. The fail is correctly identified in the LIT image. [7]

Images at the same location: (a) LIT, and (b) PEM

The area on the chip: (a) LIT, and (b) PEM. The fail is indicated by the red arrow, which is visible in the LIT image. [7]

 

 

 

 

 

 

 

 

 

 

 

[1] Schlangen, R., Deslandes, H., Lundquist, T., Schmidt, C., Altmann, F., Yu, K., Andreasyan, A., & Li, S., Dynamic lock-in thermography for operation modedependent thermally active fault localization. Microelectronics Reliability, 50, 1454-1458, (2010).
[2] J.C.H. Phang et al., “A Review of Near Infrared Photon Emission Microscopy and Spectroscopy,” Proc. 12th International Symposium Physical & Failure Analysis of Integrated Circuits, 2005.
[3] M. C. Tan, M. Y. Tay, W. Qiu and S. L. Phoa, "Fault localization using infra-red lock-in thermography for SOIbased advanced microprocessors," 18th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Incheon, 2011, pp. 1-5.
[4] Breitenstein, O., & Altmann, F. (2011). Application of Lock-In Thermography to Failure Analysis in Integrated Circuits.
[5] Breitenstein, O & P Rakotoniaina, J & Altmann, Frank & Schulz, J & Linse, G. (2019). Fault Localization and Functional Testing of ICs by Lock-in Thermography.
[6] X.P.V. Maldague, Theory and Practice of Infrared Technology for Nondestructive Testing, Wiley, New York (2001)
[7] Paul Hubert P. Llamera and Camille Joyce G. Garcia-Awitan, Thermal Failure Analysis of Functional Failures by IR Lock-in Thermal Emission, ISTFA™ 2019: Conference Proceedings from the 45th, (2019).

 

 

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