Table of Contents/Index
Chapter/Index:
Introduction |
A | B |
C |
D |
E |
F |
G |
H |
I |
J |
K |
L |
M |
N |
O |
P |
Q |
R |
S |
T |
U |
V |
W |
X |
Y |
Z |
Appendix
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| General: |
| WIS (Wafer Inspection System) |
| IDE (Integrated Dry Etch) |
| ZPIP (Zero Power Integrated Probe) |
| CpK (Process Capability Index) |
| Laser Voltage Imaging (LVI) |
| Drain current vs. gate voltage (IDVG, or ID-VG) |
| IOFF and ION in MOSFET |
| Interband transition |
| Direct interband transition |
| Indirect interband transition |
| Interband transition and measured by EELS |
| Intraband transition |
| Image similarity search |
| International Symposium for Testing and Failure Analysis (ISTFA) |
| Comparison between i-line, KrF, ArF and EUV |
| Drain induced barrier lowering (DIBL) |
| OBIRCH (Optical Beam Induced Resistance Change) and Laser Voltage Imaging (LVI) |
| Gate induced drain leakage (GIDL) |
| Ion implantation |
| Argon fluoride immersion (ArF-i) lithography |
| Solid immersion lens |
| IDS in MOSFET |
| Inverted emission microscope (iPHEMOS HAMAMATSU) |
| Identification and analysis of failure of transistors in ICs |
| Infrared (IR) radiometry and technologies |
| Infrared (IR) thermography |
| Indium antimonide (InSb) detectors |
| Academic research vs. industry research |
| InGaAs detectors |
| Active ICC current |
| WIG (Wildly Important Goal) |
| IDL (Indentation Defect Level) |
| IDL (Intrinsic Defect Limit) |
| Best fields in the area of integrated circuit in the next 10 years |
| Artificial intelligence (AI) integrated circuit (chips) |
| MIM cap (Metal-Insulator-Metal capacitor) |
| SILC (Soft Error Induced by Charge Collection) |
| ISSCC (International Solid-State Circuits Conference) |
| Automated Optical Inspection (AOI) |
| Industry 4.0 |
| Failure identification of SRAM |
| ASIC (application specific integrated circuit) |
| 8D methodology/root cause investigation for problem solving |
| SEI (Seebeck effect imaging) |
| Comparison between Electron-Beam-Probing (eBP) and Laser Voltage Imaging/Probing (LVI/LVP) |
| XIVA (externally induced voltage alteration) |
| Thermally induced voltage alteration (TIVA) |
| Infineon IR3895 |
| Floating gate-to-floating gate interference (FGFG) |
| Six Sigma DMAIC (Define, Measure, Analyze, Improve, Control) |
| Inversion and leakage-affected region of MOSFET |
| Parasitic capacitance in interconnects |
| Intrinsic regime in FET |
| Isolation devices in DRAMs |
Isolation transistor between bitlines and sense amplifiers in DRAM |
| NFA (negative feedback activated junction isolation) |
| Electrical Fault Isolation (EFI)/Fault Localization in microelectronic failure analysis |
| OMI (open memory interface) |
| WIS (wireless intelligent service) |
| WIS (water-induced shift) |
| WIS (wafer intelligent scanner) |
| Public resources (e.g. images) |
| NPI (new product introduction) |
| JIT (just-in-time) |
| PIF (profile interchange format) |
| Interconnect delay |
| AEI (automated equipment interface) |
| AEI (after etch inspection) |
| PI (proportional integral) |
| DOI (stochastic defects of interest) |
| IBB (Internal Bias Boost) current |
| VBB/Vbb (substrate bias voltage) and IBB/Ibb (substrate current) |
| HVISO (High Voltage Isolation) |
| LVI (Laser Voltage Imaging)/LVP (Laser Voltage Probing) |
| INWL (negative wordline) current |
| INWL_SBY (Idle Negative WordLine Standby Current) |
| eP3 inspection tool |
| SiO2 dry etching process (RIE or ICP-RIE) |
Isotropic dry etch process (plasma isotropic etching) |
| Plasma-induced damage in RIE |
| RIE (reactive ion etching) |
| ILR (ion beam layer removal) |
| Stress/strain fields at interfaces |
| Copper (Cu) interconnects with tantalum (Ta) barrier |
| Barriers for copper interconnections |
| Copper damascene interconnects |
| IMD (intermetal dielectric) |
| Gate-first CMOS integration |
| In Situ SEM observation of electromigration |
| Grain boundary diffusion mechanism of electromigration in interconnects in ICs |
| Electromigration transport mobility of ions in materials |
| Interfacial diffusion mechanism of electromigration in interconnects in ICs |
| EMI (Electromagnetic Interference) in SiC MOSFETs |
| MINT (merged isolation and node trench) |
| Instability of traps with trapping centers for electron and holes versus temperature |
Table of failure analysis instruments/tools in semiconductor industry |
| Electrostatic induction |
Bias Temperature Instability (BTI) |
| Space charge (interfacial) polarization |
| Ionic (molecular) polarization |
| ISSG (in situ steam generation) |
| Moat isolation |
| ACI (after-clean inspection) layer |
| Radial intensity distribution |
| Image resolution |
| ILT (inverse lithography technology) |
| ADI (after develop inspection) layer (bridge and break) |
| UVision inspection |
| Puma inspection tool |
| EBI (E-beam inspection) |
| HMI (Hermes microvision inspection) |
| PBTI (positive bias temperature instability) |
| Job responsibility and expertise/skills in different positions in the integrated circuit field |
| ICPCVD (inductively-coupled plasma chemical vapor deposition) |
| ICP-MS (inductively-coupled plasma mass spectrometry) |
| ICP-AES (inductively-coupled plasma atomic emission spectroscopy) |
| ICP (inductively-coupled plasma) |
| Job submission guideline for integrated circuits fab line troubleshooting |
| Channel Leakage Current (IChannel) |
| Gate leakage (IGate) in MOS |
| S/D (source/drain) spacer and its leakage (IS/D) |
| SDE (source/drain extension) spacer and its leakage (ISDE) |
| Gate induced drain leakage (GIDL, IGIDL) |
| Subthreshold leakage (ISubVth) |
| Gate leakage (IGate) in MOS |
| GIDL (gate-induced drain leakage) stress (off-state bias stress) |
| Interface Trap Density (Dit) |
| Inverter chain |
| Inverter delay |
| Inverter (NOT gate) design in logic ICs |
| Implantation in transistors |
| IETR (initial electron trapping rate) |
| SILC (stress-induced leakage currents) |
| GIXRD (grazing incidence x-ray diffraction) |
| IED (ion energy distribution) |
| MIM (metal-insulator-metal) |
| STI MOSFET |
| Fab flow and properties (e.g. leakage current) of shallow trench isolation (STI) |
| RAIDR (Retention-aware intelligent DRAM refresh) |
| IECC (In-DRAM ECC) |
| BISR (built-in self-repair) |
| tREF (refresh time or refresh interval) in DRAM |
| IVUP (intravascular ultrasonic-photoacoustic) |
| API (application programmer's interface) |
| API (atmospheric pressure ionization) |
| API (application programming interface) |
| API (automatic process inspection) |
| ILD (interlevel dielectric, or interlayer dielectric) |
| PMI (probe mark inspection) |
| PMI (phase measuring interferometer) |
| IDE (integrated development environment) |
| IDE (interdigitated electrodes) |
| BIOS (Basic Input/Output System) |
| I/O (input/output) in DRAM |
| Shallow Trench Isolation (STI) in DRAM |
| Local interconnect (LI) |
| Materials and gas suppliers/companies for semiconductor industry |
| "double-hump" in Id-vg curves |
| Chemical mechanical polishing (CMP) at shallow trench isolation (STI) level |
| In-line tools |
| SE (spectroscopic ellipsometry) |
| UILM (universal in-line metric) |
| In-Line XPS (X-ray photoelectron spectroscopy) |
| Infrared-based localization techniques |
| Infra Red Optical Beam Induced Resistance Change (IR-OBIRCH) |
| Lock-in thermography (LIT), which is a newer generation of IR-based localization technique. |
| Light-Induce Voltage Alteration (LIVA) |
| Intel |
| Infrared-optical beam induced resistance change (IR-OBIRCH) and its applications |
| Challenges of IR-OBIRCH detections (in EM book) |
Misleading IR-OBIRCH signals from circuits with transistors (in EM book) |
| Misleading IR-OBIRCH signals induced by defects in other circuit blocks (in EM book) |
Laser stimulation of parasitic body diode of transistors in IR-OBIRCH measurements (in EM book) |
| Via overetch detected by IR-OBIRCH (in EM book) |
Artificial OBIRCH signal caused by dynamically functional devices in ICs (in EM book) |
| Near infrared (in EM book) |
Far infrared (in EM book) |
| Lock-in IR-OBIRCH |
Streaking artifacts in TIVA and OBIRCH images (in EM book) |
| Via overetch detected by IR-OBIRCH (in EM book) |
|
| Insulator (in EM book) |
| IGBT (Insulated Gate Bipolar Transistor) |
|
| Metal-insulator transition (MIT) with change of temperature (in EM book) |
SEM observation of structures underneath insulators (in EM book) |
| Integrated circuit classes |
|
| 3DIC (3D Integrated Circuits) |
MEMS (Micro-Electro-Mechanical Systems) |
| 3D NAND |
HV (High Voltage) IC devices |
DRAM (dynamic random access memory)
|
SRAM (Static Random-Access Memory) |
| CIS (CMOS image sensor) |
MOS image sensors |
| Microlens in MOS image sensors |
Examples of sensor specifications of MOS image sensors |
| Photo shield in image sensors |
Back-side illuminated (BSI) CMOS sensors |
| Electronic optical imaging sensors/Image sensors |
EBAC analysis of CMOS image sensors |
| Scaling in IC designs (in EM book) |
Selection of substrate direction for ICs (in EM book) |
| EM simulation of integrated circuits (in EM book) |
|
| Interconnections/interconnect materials in ICs (in EM book) |
| Bamboolike microstructure in interconnects in ICs (in EM book) |
Grain boundary diffusion mechanism of electromigration in interconnects in ICs (in EM book) |
| Interfacial diffusion mechanism of electromigration in interconnects in ICs (in EM book) |
Barriers for copper interconnections (in EM book) |
| Current density scaling of interconnects in ICs (in EM book) |
|
| Indium (In) |
| AlGaInP |
InN |
| Imprint in ferroelectrics |
Intergrowth compounds |
| InP |
InAs |
| Compound semiconductor |
Phase diagram of In-X |
| Indirect interband transition |
Indirect bandgap |
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