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"Double-Hump" in Id-vg Curves - Integrated Circuits and Materials - - An Online Book - |
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| Integrated Circuits and Materials http://www.globalsino.com/ICsAndMaterials/ | ||||||||
| Chapter/Index: Introduction | A | B | C | D | E | F | G | H | I | J | K | L | M | N | O | P | Q | R | S | T | U | V | W | X | Y | Z | Appendix | ||||||||
================================================================================= It is known that "divot" will degrade the inverse narrow width effect of pass transistor and result in “double hump”. SiN pull-back in STI indeed eliminates "double-hump" in Id-vg curves of pass transistors. [1] ============================================
[1] C. H. Li, K.C. Tu, H. C. Chu, I. H. Chang, W. R. Liaw, H. F. Lee, W.Y. Lien, M. H. Tsai, W. J. Liang, W.G. Yeh, H. M. Chou, C.Y. Chen, and M. H. Chi, A robust shallow trench isolation (STI) with SiN pull-back process for advanced DRAM technology, , 13th Annual IEEE/SEMI Advanced Semiconductor Manufacturing Conference. Advancing the Science and Technology of Semiconductor Manufacturing, ASMC, DOI: 10.1109/ASMC.2002.1001567, 2002.
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