Electron microscopy
  
ID (Drain Current) in MOSFET
- Integrated Circuits and Materials -
- An Online Book -
Integrated Circuits and Materials                                                                                  http://www.globalsino.com/ICsAndMaterials/        


Chapter/Index: Introduction | A | B | C | D | E | F | G | H | I | J | K | L | M | N | O | P | Q | R | S | T | U | V | W | X | Y | Z | Appendix

=================================================================================

Figure 4224a shows the plot of inversion and leakage-affected region of a MOSFET. In the strong inversion, the current can roughly be given by the form k1(VGS-VT)2, where k1 and VT are constants. Based on the saturation curve, it can be seen that the approximate VT is about 0.6 V.

Inversion and leakage-affected region of MOSFET

Figure 4224a. Weak, moderate, and strong inversion, and saturation of a MOSFET. [1]
 

 

============================================

         
         
         
         
         
         
         
         
         
         
         
         
         
         
         
         
         
         

 

 

 

 

 

 












































































 

[1] Lecture from Yannis P. Tsividis, at Columbia University.

 

 
=================================================================================