Electron microscopy
  
Hitachi CG5000 CD-SEM
- Integrated Circuits and Materials -
- An Online Book -
Integrated Circuits and Materials                                                                                  http://www.globalsino.com/ICsAndMaterials/        


Chapter/Index: Introduction | A | B | C | D | E | F | G | H | I | J | K | L | M | N | O | P | Q | R | S | T | U | V | W | X | Y | Z | Appendix

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Top-down, uncompressed images in tiff format can be collected with a Hitachi CG5000 CD-SEM using the imaging conditions as shown in Table 4377.

Table 4377. Imaging conditions for CD-SEM data collection with a Hitachi CG5000 CD-SEM. [1]
Process Voltage
(eV)		 Pixel
size x (nm)		 Pixel
size y (nm)		 Pixel
# x		 Pixel
# y		 Magnification
(k)
Postdevelop
L/S CD		 500 0.88 0.88 512 512 300
Postdevelop
L/S LER		 500 0.80 5.0 512 512 300 × 57.2
Postdevelop
LCDU		 500 0.66 0.66 512 512 400
Postetch
LCDU		 800 0.66 0.66 512 512 400

 

 

 

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[1] Jennifer Church, Luciana Meli, Jing Guo, Martin Burkhardt, Chris A. Mack, Anuja De Silva, Karen E. Petrillo, Mary A. Breton, Ravi K. Bonam, Romain Lallement, Eric R. Miller, Brad Austin, Shravan Matham, Nelson M. Felix, Fundamental characterization of stochastic variation for improved single-expose extreme ultraviolet patterning at aggressive pitch, Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol. 19, Issue 3, 034001 (July 2020). DOI: 10.1117/1.JMM.19.3.034001.

 

 

 

 
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