Integrated Circuits and Materials

Figure 4543a shows the distribution of band gap versus dielectric constant of dielectrics.

Figure 4543b shows the average energy (radiation ionization energy) required to form one electron-hole pair versus bandgap energy for a number of semiconductor materials.

Figure 4543b. The average energy required to form one electron-hole pair versus bandgap energy for a number of semiconductor materials [1].

Figure 4543c shows bandgap and chemical bond length for semiconductors used in visible LEDs (light emitting devices).

Figure 4543c. Bandgap and chemical bond length for semiconductors used in visible LEDs (light emitting devices). Adapted from [2]

Table 4543 list the bandgap energies of semiconductor materials and dielectrics.

Table 4543. Bandgap energies of semiconductor materials and dielectrics. [1]

Note that at a misfit dislocation, the effective energy gap E_g is reduced. However, line defect self-interstitials in silicon give rise to an energy-loss peak at 2.5 eV, measured by using EELS technique. [3]

[1] Glenn F. Knoll, Radiation Detection and Measurement, Wiley (1979).
[2] Ponce, F. A. and Bour, D.P., Nature, 386, (1997) 351.
[3] Takeda, S., Terauchi, M., Tanaka, M., and Kohyama, M. (1994) Line defect configuration incorporated with self-interstitials in Si: A combined study by HRTEM, EELS and electronic calculation. In Electron Microscopy 1994, Proc. 13th Int. Cong. Electron Microsc., Paris, Vol. 3, pp. 567–568.