Electron microscopy
  
MOSFETs with Biased Spacer
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NMOS-FET with poly-si spacers

Figure 4741. NMOS-FET with poly-si spacers. The poly-Si spacers have different work function form the main gate, inducing inversion layer easily under the poly-Si spacers. [1]

 

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[1] Junsoo Kim, Byung-Gook Park, Jong Duk Lee and Hyungcheol Shin, MOSFETs with Biased Spacer Having Different Work-Function from the Gate, Journal of the Korean Physical Society, Vol. 45, No. 4, October 2004, pp. 1093-1097.

 

 
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