Electron microscopy
  
VBS in MOSFET
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Figure 4964a shows the plot of inversion and leakage-affected region of a MOSFET. In the strong inversion, the current can roughly be given by the form k1(VGS-VT)2, where k1 and VT are constants. Based on the saturation curve, it can be seen that the approximate VT is about 0.6 V.

Inversion and leakage-affected region of MOSFET

Figure 4964a. Weak, moderate, and strong inversion, and saturation of a MOSFET. [1]

In the ID/VD curve, the current IDS is plotted for varying gate voltage VGS, from 0 to VDD.

NMOSFET NMOSFET NMOSFET
(a)
(b)
(c)
Figure 4964b. Definition of VGS, VBS, VDS and IDS.

 

 

 

 

 

 

 

 

 

[1] Lecture from Yannis P. Tsividis, at Columbia University.

 

 

 
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