Electron microscopy
 
Elemental Characterization in Physical Analysis of IC Failure
- Practical Electron Microscopy and Database -
- An Online Book -
Microanalysis | EM Book                                                                                   http://www.globalsino.com/EM/        


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Elemental characterization of various materials used in integrated circuit (IC) fabrication processes is critical for identifying anomalies that cause the semiconductor devices to fail. An analytical transmission electron microscope (TEM), equipped with EDS and EELS systems is often used to characterize device features and defects in physical analysis of IC failure. For successful TEM analysis in semiconductor applications, the final thickness of the thinned TEM samples can range from tens to hundreds of nanometers, depending on the goal of the analysis, the dimension of the feature of interest, the elemental compositions at the area of interest, and the required accuracy and overall goals of the analysis. The quality of the samples can also vary significantly based on the history of the sample and the method of sample preparation.

 

 

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