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In integrated circuits (ICs), conductive lines provide electrical interconnection among different parts of the ICs, devices, and the outside. The main applications of metallization are classified by gate, contact, and interconnection. Polysilicon and silicides are commonly applied as gates and interconnects in MOS devices. Aluminum, copper, tungsten, silver, titanium, platinum, gold, and palladium are used as these types of contacts, connections, and/or interconnection to external components.
Figure 2030a. Dependence of recombination lifetime on-metal (Ru, Pt, Cu) concentation in ICs. [1]
| Figure 2030b. Metallic contamination levels on a wafer backside before/after cleaning using the CAN-nitric acid solution then HF-based acid cleaning. [1] |
[1] H. Aoki, K. Watanabe, T. Iizuka,N. Ishikawa and K. Mori, Ruthenium Film Etching and Cleaning Process Using Cerium Ammonium Nitrate (CAN)-Nitric Acid, Extended Abstracts of the 2001 International Conference on Solid State Devices and Materials, Tokyo, 2001, pp. 20-21.
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