Copper Migration Failures in ICs
- Practical Electron Microscopy and Database -
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Copper migrating into silicon active areas can form deep level traps, causing a dramatic decrease of minority carrier lifetime or can form copper silicide precipitates resulting in leakage current at source and drain shallow junctions. Copper diffusion into the SiO2 field insulator can also induce mobile charges, resulting in transistor parameter shifts [1,2].

 

 

 

 

 

[1] A. Mesli, T. Heser, Phys. Rev. B 45(20) (1992) 11632.
[2] F. Braud, J. Torres, J. Palleau, J.L. Mermet, C. Marcadal, E. Richard, Proceedings 1996 13th VMIC (1996) 174.

 

 

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