Copper Migration Failures in ICs
- Practical Electron Microscopy and Database -
- An Online Book -  

This book (Practical Electron Microscopy and Database) is a reference for TEM and SEM students, operators, engineers, technicians, managers, and researchers.


Copper migrating into silicon active areas can form deep level traps, causing a dramatic decrease of minority carrier lifetime or can form copper silicide precipitates resulting in leakage current at source and drain shallow junctions. Copper diffusion into the SiO2 field insulator can also induce mobile charges, resulting in transistor parameter shifts [1,2].






[1] A. Mesli, T. Heser, Phys. Rev. B 45(20) (1992) 11632.
[2] F. Braud, J. Torres, J. Palleau, J.L. Mermet, C. Marcadal, E. Richard, Proceedings 1996 13th VMIC (1996) 174.




The book author (Yougui Liao) welcomes your comments, suggestions, and corrections, please click here for submission. You can click How to Cite This Book to cite this book. If you let book author know once you have cited this book, the brief information of your publication will appear on the “Times Cited” page.

Copyright (C) 2006 GlobalSino, All Rights Reserved