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The extent of electron backscattering electrons (BSEs) increases at low accelerating voltages of the incident electron beam, therefore, the contrast of the backscattered electron images is increased. However, the lower accelerating voltages reduce the contrast of STEM images.
Figure 2926 shows the simulated and experimental yields of BSEs for
the electron incident voltages lower than 5 keV for a silicon sample.
| Figure 2926. Simulated and experimental yields of BSEs for
the electron incident voltages lower than 5 keV for a silicon sample. [1, 2] |
[1] Hendrix Demers, Nicolas Poirier-Demers, Alexandre Real Couture, Dany Joly, Marc Guilmain, Niels De Jonge And Dominique Drouin, Three-Dimensional Electron Microscopy Simulation with the CASINO Monte Carlo Software, CANNING 33, 135–146 (2011).
[2] Bronstein IM, Fraiman BS. 1969. Vtorichnaya elektronnaya
emissiya. Moskva: Nauka.
|
