Comparison between FIB, Electron Beam and Laser Beam Techniques
- Practical Electron Microscopy and Database -
- An Online Book -
Electron microscopy
  Microanalysis | EM Book                                                                   http://www.globalsino.com/EM/  
 

 

 

Table 3298. Comparison between FIB, electron beam and laser beam techniques.

 
Focused ion beam (FIB)
Electron beam (EB)
Laser beam (LB)
Lithography
Capability of lithography
Yes Yes Yes
Write pattern in a resist
Yes Yes Yes

Resist sensitivity

More Less  

Exposure depth in resist

Very limited (e.g. <100 nm at 100 keV) Less limited Much less limited
Impurity of source elements within resist
Is an issue Is not an issue Is not an issue
Photoresist layer
No need No need Need

Proximity effect

Negligible Not negligible  
Others

Pixel size

= beam spot size >> beam spot size  

Generation of SE by per 1 particles at 20 kV

~1 - 2 ~0.5 - 0.8  

Generation of BSE by per 1 particles at 20 kV

0 ~0.3 - 0.5  

Generation of SI by per 1 particles at 20 kV

~0.3 0  

Generation of X-ray by per 1 particles at 20 kV

0 ~0.006 - 0.008  
Typical energy
≥100 keV for lithography, ≤50 keV sputtering, ≤30 keV for deposition 5~20 keV for lithography and deposition -

Focus ability

More difficult, e.g. due to more chromatic aberration, etc. Easier, e.g. due to less chromatic aberration, etc. Easier, e.g. due to less chromatic aberration, etc.
Depth of focus
~20 μm ~8-10 μm <2 μm for He-Cd laser
Typical surface roughness (rms)
≤2 nm 1.5 nm 25-100 nm
Profile accuracy
<0.1 μm for lithography and sputtering, <0.5 μm for deposition <0.1 μm <0.1 μm for He-Cd laser

Resolution

~7 nm (better for small current) 2~5 nm >1 μm for He-Cd laser
Specimen limitation
Gases cannot be analyzed and liquids are limited to those that have very limited volatility and will not contaminate the column and specimen chamber because specimens must be exposed to vacuum conditions. Any specimens

        * SEs: Secondary electrons
           SIs: secondary ions
           BSEs: Backscattering electrons 

 

 

;