Comparison between EELS and AES
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Table 3925. Comparison between EELS and AES 

  EELS AES
Naming
Named by the initial state, , e.g. 2p3/2 → 3d5/2 is Lα1 [see page4478] Named by initial ionization, filling shell, shell of ejected electron, e. g. KL2L3 [see page4478]
Quantification
Less complicated More complicated and needs standards
Sensitivity
Highly sensitive to low atomic number (Z) elements Highly sensitive to low atomic number (Z) elements
Energy of detected electrons
Best range: 100 eV to 1, 000 eV Energies of Auger electrons: 20–500 eV
Surface sensitivity
Not very surface-sensitive Highly surface sensitive
Vacuum
High vacuum Ultrahigh vacuum
Bulk specimens
Applicable for reflection EELS (REELS) Applicable for "backscattering" detection
Spatial resolution
< 1 nm for thin TEM films 100 nm for bulk specimens; 2 nm for thin films
Process
Energy loss process is the first step after interaction of incident electrons with atoms. Refer to Figure 3925 below. Auger electron generation can originate from energy loss process of incident electrons. Refer to Figure 3925 below.

Figure 3925 shows the schematic illustrations of examples of energy loss process of incident electrons (a), x-ray generation (b), and Auger electron generation (c). EKE1 and EKE2 represent the kinetic energies of the two generated SEs. ΔE1 and ΔE2 represent the energy losses of the incident electrons after the incident electrons interact with the electrons in the K and L3 subshells, respectively. E1 and E2 are the binding energies of the two electrons. E0 is the energy of the incident electrons in the EMs. EKE represents the kinetic energy of Auger electrons.

Schematic illustrations of energy loss process (a), x-ray generation (b), and Auger electron generation (c)

Figure 3925. Schematic illustrations of examples of energy loss process (a), x-ray generation (b), and Auger electron generation (c).

 

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