| Table 998. Current density threshold causing electromigration.
| Materials |
Temperature |
Current density threshold |
| A/cm2 |
nA/nm2 |
SnPb solder |
100° |
8.5 x 103 [1] |
8.5 x 108 |
SnAgCu |
|
104 [3] |
109 |
Al film |
|
1.6 x 105[5] |
1.6 x 1010 |
Pb-5%Sn |
|
4.5 x 103[4] |
4.5 x 108 |
Cu |
|
106 [3] |
1011 |
Al film |
< 200° |
105 [2] |
x 1010 |
[1] Y. T. Yeh, C. K. Chou, Y. C. Hsu, Chih Chen, K. Tu, Threshold current density of electromigration in eutectic SnPb solder, Appl. Phys. Lett. 86, 203504 (2005).
[2] H.-U.Schreiber, Electromigration threshold in aluminum films, 28, 6, 617-626 (1985).
[3] Sadia Khan, Electromigration Analysis of High Current Carrying Adhesive-Based Copper-to-Copper Interconnections, thesis, (2012).
[4] Abraham H. Landzberg, Microelectronics Manufacturing Diagnostics Handbook, 1993.
[5] K. N. Tu, Recent advances on electromigration in very-large-scale-integration of interconnects, Applied Physics Reviews, (2003).
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