Electron microscopy
  
Potassium Hydroxide (KOH) Etching
- Practical Electron Microscopy and Database -
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Table 1224. Etch rates of materials using KOH-related solutions.

Etched Materials
Etchant
Etch rates
Silicon nitride
 30% KOH ~1 nm/hr at 90 °C
Silicon dioxide
 30% KOH ~940 nm/hr at 90 °C
Si (100)
 30% KOH ~130 µm/hr at 90 °C (typical temperature)
Si (110)
 30% KOH ~210 µm/hr at 90 °C (typical temperature)

 

Etch rate of (100) Si in 30 % KOH as a function of temperature

Figure 1224a. Etch rate of (100) Si in 30 % KOH as a function of temperature.

Etch rate of (110) Si in 30 % KOH as a function of temperature

Figure 1224b. Etch rate of (110) Si in 30 % KOH as a function of temperature. The etch rate is higher than that for (100) Si in Figure 1224a.

Etch rate of silicon dioxide in 30 % KOH as a function of temperature

Figure 1224c. Etch rate of silicon dioxide in 30 % KOH as a function of temperature.


 

 
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