Electron Backscattering Affected by Accelerating Voltage
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The extent of electron backscattering increases at low accelerating voltages of the incident electron beam. Figure 2928 shows Monte Carlo simulation of backscattered and absorbed electrons in Al (aluminium) with 7 keV and 4 keV incident electron beam. Both the interaction volumes of the backscattered and absorbed electrons for 4 keV are smaller than those for 7 keV. The depths of backscattered electrons are ~140 nm and ~ 50 nm, respectively.

Monte Carlo simulation of backscattered and absorbed electrons in Al with 7 keV and 4 keV incident electron beam

Figure 2928. Monte Carlo simulation of backscattered and absorbed electrons in Al with 7 keV and 4 keV incident electron beam (red: backscattered electrons, and blue: absorbed electrons). [1]

 

 

 

 

 

 

 

 

[1] Jorg Nissen and Dirk Berger, Lateral resolution of quantitative element analysis of low-Z elements, https://doi.org/10.1002/9783527808465.EMC2016.6229.

 

 

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