Chapter/Index: Introduction | A |
B |
C |
D |
E |
F |
G |
H |
I |
J |
K |
L |
M |
N |
O |
P |
Q |
R |
S |
T |
U |
V |
W |
X |
Y |
Z |
Appendix
Comparison between SEM and TEM
| Table 4997. Comparison between SEM and TEM in semiconductor applications (detailed version of this table: link).
| |
SEM |
TEM |
| Typical spatial resolution |
1 to 50 kV 30 Å depending on sample |
50 to 300 kV, even a million volts: 0.5 Å or better. Atomic planes visible |
| Depth of field |
Large |
Very small |
| Advantages |
Can view objects' three-dimensional surface, local and global information |
Very high resolution, less electron broadening in specimen |
| Error sources and limitations |
Sample drift, vibration;
contamination, beam damage, three dimentional effect (beam
projection artefacts) , noise |
Lack of sub-nanometre beam placement accuracy, more electron broadening in specimen affects the spactial resolution |
Extensive specimen preparation is needed
(therefore
destructive), relatively
small high-resolution
field of view, cannot observe the surface of objects. |
| Field of view |
50 nm to 10 mm |
tens of
nm to tens of µm |
| Sample size |
Large area |
Very small area |
| Magnification |
Magnification ranges from 25x to 250,000x. |
A series of electrostatic and electromagnetic lenses act on an electron beam to produce up to 50 million times magnification |
| Emission of secondary electrons |
In backward direction only due to thick materials, all incident electrons generate secondary electrons |
In forward and backward directions due to thin film, only some incident electrons generate secondary electrons |
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