Electron microscopy
  
TEM Images of Nickel Silicides
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Table 995. TEM images of nickel silicides.

Nickel silicides TEM images
NiSi NiSi
Residual defects formed in ion implanted silicon can be reduced by silicide formation. Figures above show the removal of end-of-range defects by NiSi formation on 110 keV, 5 × 1015/cm2 BF+2-implanted (001)Si: (a) as-deposited and (b) samples annealed at 600 °C for 1 h. [5] 
NiSi + NiSi2 NiSi + NiSi2
White arrow "1" points to thicker NiSi, while arrow "2" points to thinner NiSi2. Adapted from [4] 
NiSi2 Epitaxial silicide/Si interfaces, viewed in the [1-10] direction
Epitaxial silicide/Si interfaces, viewed in the [1-10] direction: (a) the 7-fold type A NiSi2/Si(111) interface; (b) the 7-fold type B NiSi2/Si(111) interface and the 6-fold NiSi2/ Si(100) interface. Type A NiSi2 has the same orientation as the silicon substrate. Type B NiSi2 shares the surface normal <111> axis with the Si, but is rotated 180° about this axis with respect to the Si. [6]
(111) NiSi2 facet formed on the (100) Si plane. [1]
(111) NiSi2 facet formed on the (100) Si plane, the facet induces junction leakage [1]
Smooth silicide/Si interfaces with facetless texture of NiSi2 at the interface
Smooth silicide/Si interfaces with facetless texture of NiSi2 at the interface [1]
Self-organized (111) NiSi2 improves the short channel effect due to the trapezoidal shape channel formation [1]
Self-organized (111) NiSi2 improves the short channel effect due to the trapezoidal shape channel formation [2]
Self-organized (111) NiSi2 improves the short channel effect due to the trapezoidal shape channel formation [2]
Self-organized (111) NiSi2 improves the short channel effect due to the trapezoidal shape channel formation [2]
Self-organized (111) epitaxial NiSi2 S/D (with an angle of 54.7°) improves the short channel effect due to the trapezoidal shape channel formation. [2]  
NiSi2 abnormal growth
NiSi2 abnormal growth [3]
Ni0.23Si0.77 Ni0.23Si0.77
Rough silicide/Si interfaces [1]

 

 

 

 

 

 

[1] Hou-Yu Chen, Chia-Yi Lin, Min-Cheng Chen, Chien-Chao Huang, and Chao-Hsin Chien, Nickel Silicide Formation using Pulsed Laser Annealing for nMOSFET Performance Improvement, Journal of The Electrochemical Society, 158 (8) H840-H845 (2011).
[2] N. Mise, S. Migita, Y. Watanabe, H. Satake, T. Nabatame, and A. Toriume, (111)-Faceted Metal Source and Drain for Aggressively Scaled Metal/High-k MISFETs, IEEE Trans. Electron Devices, 55, 1244 (2008).
[3] S. Kudo, Y. Hirose, N. Hashikawa, T. Yamaguchi, K. Kashihara, K. Maekawa, K. Asai, N. Murata, K. Asayama and E. Murakami, Analysis of Ni Silicide Abnormal Growth Mechanism Using Advanced TEM Techniques, IEEE International Reliability Physics Symposium, 2008. IRPS (2008) 10074334.
[4] Takuya Futase, and Hisanori Tanimoto, Fluoride Contamination Induced NiSi2 Film Formation in a Gate NiSi Line, IEEE Transactions on Semiconductor Manufacturing, 26(3), (2013) 355.
[5] Lih J. Chen, Silicide Technology for Integrated Circuits, 2004.
[6] R. T. Tung, Epitaxial CoSi2 and NiSi2 thin films, Materials Chemistry and Physics, 32 (1992) 107-133.

 

 
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