Electron microscopy
 
Negative Binomial Yield Model (with Random-but-Clustered Defects/Fails)
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If the distribution of the defects/fails is random, but clustered, then the negative binomial yield model can be used. In this case, it can be assumed that the likelihood of an event occurring at a given location increases linearly with the number of events that have already occurred at that location. [1] In this model, the probability that one die contains k defects follows negative binomial distribution, [2]
         probability that one die contains k defects follows negative binomial distribution -------------------------------------- [4304a]
where,         
        k -- The exact number of faults in given area.
        β -- The expected number of faults in given area.
        α -- The clustering factor, (µ/σ)2, which determines the degree of clustering of the model.
        µ -- The average defect density (αβ).
        σ2 -- The variance of defect density (α).
Since D0 = αβ, the yield model is then given by,         
         probability that one die contains k defects follows negative binomial distribution-------------------------------------------------------------------------------------------------------- [4304b]

It can be known that:
        i) If α is equal to 1, then Equation 4304b is equivalent to the Seed's yield model.
        ii) If α goes to ∞, then Equation 4304b gives the same result as the Poisson model, indicating no clustering.
        iii) The practical range of α is 0.3 to 5.0 which fits well with actual yield data. [3,4]

As an example, assuming a single IC chip has an average of 0.001 faults per die, if the negative binomial yield model of Equation 4304b is applied, and the yield of a die with 500 of these ICs is equal to,
          (1+500*0.001/0.5)-0.5 = 70.7% ------------------------------------------------------------------------------------------------- [4304c]
where,
         α = 0.5.
         D0 = 0.001.
         Ac = 500.       

Table 4304 shows estimated yield for 0 = 0.5, 1.0, 2.0, ∞ with different yield models.

Table 4304. Estimated yield for 0 = 0.5, 1.0, 2.0, ∞ with different yield models. [2]
Model α µ = 0.001
D0 = 0.001
Ac = 1   
µ = 0.5
D0 = 0.001
Ac = 500  
µ = 10
D0 = 0.001
Ac = 10000  
Negative Binomial 0.5 99.9% 70.7% 21.8%
1.0 99.9% 66.7% 9.1%
2.0 99.9% 64.0% 2.8%
Poisson 99.9% 60.7% 0.0%
Murphy -- 99.9% 61.9% 1.0%
Seed -- 99.9% 66.7% 9.1%

 

 

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[1] Ferris-Prabhu, A.V., "Models for Defects and Yield," in Defect and Fault Tolerance in VLSI Systems, edited by Koren, I., 1989, pp 33-46.
[2] Way Kuo, Wei-Ting Kary Chien and Taeho Kim, Reliability, Yield, and Stress Burn-In: A Unified Approach for Microelectronics Systems Manufacturing & Software Development, 1998.
[3] Stapper, C.H., "Fact and fiction in yield modeling," Microelectronics Journal, 20, (1/2), 1989, pp 129-151.
[4] Stapper, C.H., "Defect density distribution for LSI yield calculations," IEEE 7ransactions on Electron Devices, ED-20, Jul. 1973, pp 655-657.

 

 

 

 

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