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Milling Rate of Materials with Argon Ion Polishing
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Table 1309. Examples of milling rates of different materials with argon (Ar) ion polishing. The incident angle is the angle of incidence with respect to target normal.

Sputtered material
Milling rate
(µm3nA-1s-1 )
Total Yield (Atoms/Ion)
Beam energy: 2 kV and incident angle: 30°
Si 0.0778  
Beam energy: 2 kV and incident angle: 15°
Si 0.01667 [1]  
Beam energy: 900 V and incident angle: 15°
Si 0.0138 [1]  
Beam energy: 500 V and incident angle: 15°
Si 0.0041667 [1]  
Beam energy: 500 V and incident angle: 0°
Ag 0.366667 [3], 0.3 [4]  
Al 0.1216667  
Al2O3 0.01667 [3]  
Au 0.28333 [3], 0.18 [4]  
Be 0.028333  
C 0.00733  
CaHNaO2 0.04875  
CdS 0.38333  
Co 0.091667  
Cr 0.096667 [3], 0.08833 [4]  
Cu 0.183333  
Dy 0.183333  
Er 0.163333  
Fe 0.088333  
GaAs (110) 0.266667  
GaP (111) 0.266667  
GaSb (111) 0.316667  
Gd 0.183333  
Ge 0.166667  
Hf 0.11  
InSb 0.25  
Ir 0.1  
LiNbO3 0.06667  
MgO 0.02667  
Mo 0.09  
Mo2C 0.048333333  
Nb 0.073333333  
Ni 0.11  
Os 0.085  
PbTe 0.633333333  
Pd 0.21667  
Pt 0.14667 [3]  
Re 0.08667  
Rh 0.12333  
Ru 0.10167  
Si 0.06333 [3]  
SiC (0001) 0.058333333  
SiO2
0.0667, 0.065 [3], 0.0617 [4]  
Sm 0.183333333  
Sn 0.3  
Ta 0.07  
Th 0.136666667  
Ti 0.063333333  
U 0.123333333  
V 0.061666667  
W 0.063333333  
Y 0.16  
YBa2Cu3O7
0.075  
ZnS 0.1219  
Zr 0.103333333  
Beam energy: 400 V and incident angle: 0°
YBa2Cu3O7-x
0.008667 [2]  
Beam energy: 200 V and incident angle: 0°
Ag 0.166666667  
Al 0.048333333  
Au 0.118333333  
Be 0.008666667  
C 0.002166667  
CdS 0.183333333  
Co 0.043333333  
Cr 0.055  
Cu 0.088333333  
Dy 0.096666667  
Fe 0.043333333  
GaAs (110) 0.13  
GaP (111) 0.115  
GaSb (111) 0.15  
Gd 0.091666667  
Ge 0.081666667  
Hf 0.051666667  
InSb 0.126666667  
Ir 0.043333333  
Mo 0.04  
Nb 0.03  
Ni 0.051666667  
Os 0.033333333  
PbTe 0.266666667  
Pd 0.1  
Pt 0.065  
Re 0.038333333  
Rh 0.051666667  
Ru 0.04  
Si 0.026666667  
Sm 0.085  
Sn 0.141666667  
Ta 0.033333333  
Th 0.068333333  
Ti 0.026666667  
U 0.056666667  
V 0.028333333  
W 0.03  
Y 0.075  
Zr 0.045  
     
* The angles are the angles from normal incidence.

 

 

 

[1] Arda Genç, Phase Stability in Metallic Multilayers, Ohio State University, Dissertation, 2008.
[2] Roman Adam, Stefan Benacka, Stefan Chromik, Marian Darula, Vladimir Strbik, and Stefan Gazi, Ivan Kostic, Emil Pincik, YBa2Cu3O7-x Step-Edge Junctions Prepared on Sapphire Substrates with YSZ Buffer Layer, IEEE Transactions on Applied Superconductivity, 5 (2), 1995.
[3] Williams, K., Gupta, K. & Wasilik, M. Etch rates for micromachining processingpart II. J. Microelectromech. S. 12, 761–778 (2003).
[4] Commonwealth Scientific Corporation. Ion beam etch rates. Bulletin 137-78.

 

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