This book (Practical Electron Microscopy and Database) is a reference for TEM and SEM students, operators, engineers, technicians, managers, and researchers.
 

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Analysis of defects in amorphous materials using TEM-related techniques is very challenging, even though the TEM characterization of the defects in crystals is widely applied to various materials.

One characterization method for defects in amorphous materials is based upon FFT (fast Fourier transform) analysis. If the intensity of HRTEM image is represented as a series of random, uncorrelated pixel intensities its Fourier transform will also be random and uncorrelated, with amplitudes modulated about a constant mean value. The defective structure in the specimen will cause the mean value to vary, for instance, producing a peak in the Fourier spectrum whose width corresponds to the size of defects in the specimen and whose amplitude corresponds to the density of defects.