EDS Measurement of Hafnium (Hf) - Practical Electron Microscopy and Database - - An Online Book - |
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In practice, for Hf (hafnium) EDS analysis, the Mα X-ray line (1.644 KeV) or the Lα1/Lα2/Ln lines (~8.00 KeV) can be used for both qualification and quantification. In some cases, the detection of Hf elements using EDS technique is difficult. For instance, when SEM-EDS is used to measure Hf-doped zircon (Hf-ZrSiO4) crystals, the detection of small Hf contents is not efficient because the Si-K line overlaps the Hf-M series and the peak-to-background ratio for the Hf-Lα line at 7.9 keV is very low due to its weak intensity. Figures 1734a and 1734b were taken in two different TEM systems. The ratios of M and Lα peak heights are different in the two figures due to various reasons such as differences of detectors and sample thicknesses. Figure 1734a. EDS spectrum of HfO2. The ratio of M and Lα peak heights is 1:0.202.
The EDS data shown in Figure 1734c was obtained on a SEM sample with an HfO2 film deposited on a Si (silicon) substrate. Si Kα and Hf M overlapped each other, and the main intensity of the sum peak was from Si due to its higher atomic percentile from the substrate.
[1] Samares Kar, Physics and Technology of High-k Materials 8, Issue 3, 2010.
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