WSix
- Practical Electron Microscopy and Database -
- An Online Book -

https://www.globalsino.com/EM/  



 
This book (Practical Electron Microscopy and Database) is a reference for TEM and SEM students, operators, engineers, technicians, managers, and researchers.
 

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Table 2009a. Metallization selections in ICs.

Application
Selection
Gates, interconnection, and
contacts
Polysilicon, refractory metal silicides (e.g. MoSix, TaSix, WSix, and TiSix), nitrides,aluminum, copper, and/or refractory metals.
Diffusion barrier layer
Ti, TiN, Ta, TaN, Ti-W alloy, and/or silicides
Top level
Aluminum, and/or copper
Metallization on silicon
Silicides, tungsten, aluminum, and/or copper

The chemical reaction for WSi2 film growth is given by,

          chemical reaction for WSi2 film growth --------------- [2009]

Table 2009b. Properties of WSi2 materials.

Properties
Tetragonal WSi2
Thin film resistivity
(μΩ − cm)
30-120
Thermal expansion (ppm/°C)
6-8
Melting point (°C)
2165
Sintering temperature (°C)
1000
Stable on Si up to (°C)
~1000
Reaction with Al at (°C)
500
nm of Si consumed per nm of
metal
2.53
nm of resulting silicide per nm of metal
2.58
Si consumption (nm Si/nm Silicide)
0.98
Barrier height to n-Si (eV)
0.67
Advantages
Can be deposited by CVD so that it is easy in manufacturing

 

 

 

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