TaSix
- Practical Electron Microscopy and Database -
- An Online Book -

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This book (Practical Electron Microscopy and Database) is a reference for TEM and SEM students, operators, engineers, technicians, managers, and researchers.
 

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Table 2010a. Metallization selections in ICs.

Application
Selection
Gates, interconnection, and
contacts
Polysilicon, refractory metal silicides (e.g. MoSix, TaSix, WSix, and TiSix), nitrides,aluminum, copper, and/or refractory metals.
Diffusion barrier layer
Ti, TiN, Ta, TaN, Ti-W alloy, and/or silicides
Top level
Aluminum, and/or copper
Metallization on silicon
Silicides, tungsten, aluminum, and/or copper

The chemical reaction for TaSi2 film growth is given by,

          chemical reaction for WSi2 film growth --------------- [2010]

Table 2010b. Properties of TaSi2 materials.

Properties
TaSi2
Thin film resistivity
(μΩ − cm)
10-55
Thermal expansion (ppm/°C)
8-11
Melting point (°C)
2200
Sintering temperature (°C)
800-1000
Stable on Si up to (°C)
~1000
Reaction with Al at (°C)
500
nm of Si consumed per nm of
metal
2.21
nm of resulting silicide per nm of metal
2.41
Si consumption (nm Si/nm Silicide)
0.92
Barrier height to n-Si (eV)
0.59

 

 

 

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