|
|
TaSix
- Practical Electron Microscopy and Database -
- An Online Book -
|
|
https://www.globalsino.com/EM/
|
|
This book (Practical Electron Microscopy and Database) is a reference for TEM and SEM students, operators, engineers, technicians, managers, and researchers.
|
=================================================================================
Table 2010a. Metallization selections in ICs.
Application |
Selection |
Gates, interconnection, and
contacts |
Polysilicon, refractory metal silicides (e.g. MoSix, TaSix, WSix, and TiSix), nitrides,aluminum, copper, and/or refractory metals. |
Diffusion barrier layer |
Ti, TiN, Ta, TaN, Ti-W alloy, and/or silicides |
Top level |
Aluminum, and/or copper |
Metallization
on silicon |
Silicides, tungsten, aluminum, and/or copper |
The chemical reaction for TaSi2 film growth is given by,
 --------------- [2010]
Table 2010b. Properties of TaSi2 materials.
Properties |
TaSi2 |
Thin film
resistivity
(μΩ − cm) |
10-55 |
Thermal expansion (ppm/°C) |
8-11 |
Melting point
(°C) |
2200 |
Sintering temperature
(°C) |
800-1000 |
Stable on
Si up to
(°C) |
~1000 |
Reaction
with Al at
(°C) |
500 |
nm of Si
consumed
per nm of
metal |
2.21 |
nm of
resulting
silicide
per nm of
metal |
2.41 |
Si consumption (nm Si/nm Silicide) |
0.92 |
Barrier
height to
n-Si (eV) |
0.59 |
|
=================================================================================
The book author (Yougui Liao) welcomes your comments, suggestions, and corrections, please click here for submission. If you let book author know once you have cited this book, the brief information of your publication will appear on the “Times Cited” page.
|
|
