MoSix
- Practical Electron Microscopy and Database -
- An Online Book -

http://www.globalsino.com/EM/  



 
This book (Practical Electron Microscopy and Database) is a reference for TEM and SEM students, operators, engineers, technicians, managers, and researchers.
 

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Table 2011a. Metallization selections in ICs.

Application
Selection
Gates, interconnection, and
contacts
Polysilicon, refractory metal silicides (e.g. MoSix, TaSix, WSix, and TiSix), nitrides,aluminum, copper, and/or refractory metals.
Diffusion barrier layer
Ti, TiN, Ta, TaN, Ti-W alloy, and/or silicides
Top level
Aluminum, and/or copper
Metallization on silicon
Silicides, tungsten, aluminum, and/or copper

Table 2011b. Properties of MoSi2 materials.

Properties
MoSi2
Thin film resistivity
(μΩ − cm)
20-100
Thermal expansion (ppm/°C)
~8
Melting point (°C)
1980
Sintering temperature (°C)
800-1000
Stable on Si up to (°C)
~1000
Reaction with Al at (°C)
500
nm of Si consumed per nm of
metal
2.56
nm of resulting silicide per nm of metal
2.59
Si consumption (nm Si/nm Silicide)
0.99
Barrier height to n-Si (eV)
0.64

 

 

 

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