Junction shorts in ICs
- Practical Electron Microscopy and Database -
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Ideally, Al (aluminum) would be deposited directly onto Si with perfect interfaces between Al and Si as shown in Figure 2015 (a). Unfortunately, the Si migrates into the Al, resulting in voids formed in the Si as shown in Figure 2015 (b). The Al can subsequently migrate into the formed voids, inducing spiking as shown in Figure 2015 (c). The big spike leads to junction shorts between n+ and p layers.

Historical Development of Ohmic Contacts in Si-based ICs

Figure 2015. (a) Al deposited directly onto Si; (b) Voids formed in Si; and (c) Al spiking.

Copper migrating into silicon active areas can form copper silicide precipitates resulting in leakage current at source and drain shallow junctions.

 

 

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