Wafer Cleaning Chemistry in IC Fabrications
- Practical Electron Microscopy and Database -
- An Online Book -

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Table 2426. Wafer cleaning chemistry in IC fabrications.

Chemical component

Purpose

Method
Ammonium fluorosilicate
[(NH4)2SiF6]
Remove native oxide on Si substrate [1, 2]
Chemical dry-clean (CDC)

 

 

[1] R. Yang, N. Su, P. Bonfanti, J. Nie, and J. Ning, “Advanced in situ pre-Ni silicide (Siconi) cleaning at 65 nm to resolve defects in NiSix modules,” J. Vac. Sci. Technol. B, vol. 28, no. 1, pp. 56–61, Jan. 2010.
[2] T. Yamaguchi, K. Kashihara, S. Kudo, T. Tsutsumi, T. Okudaira, K. Maekawa, Y. Hirose, K. Asai, and M. Yoneda, “Characterizations of NiSi2-whisker defects in n-channel metal-oxide-semiconductor fieldeffect transistors with <110> Channel on Si(100),” Japan. J. Appl. Phys., vol. 49, no. 12, pp. 126–503, Dec. 2010.

 

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