This book (Practical Electron Microscopy and Database) is a reference for TEM and SEM students, operators, engineers, technicians, managers, and researchers.
 

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Figure 2648 shows EELS spectra for beryllium nitride films grown by reactive laser ablation at different nitrogen pressures of (a) 0 mTorr; (b) 1 mTorr; (c) 13 mTorr; and (d) 50 mTorr. For case (a), the maximum peak intensity at 19.2 eV corresponds to free electron bulk plasmon oscillations of metallic beryllium (Be), and the surface plasmon is observed as the shoulder of the main peak in the 12–14 eV region. As the nitrogen pressure increased, the bulk plasmon shifted from 19.2 eV up to 23 eV.

Figure 2648. EELS spectra for beryllium nitride films grown by reactive laser ablation at different nitrogen pressures of (a) 0 mTorr; (b) 1 mTorr; (c) 13 mTorr; and (d) 50 mTorr. [1]

[1] G. Soto, J.A. Díaz, R. Machorro, A. Reyes-Serrato, W. de la Cruz, Beryllium nitride thin film grown by reactive laser ablation, Materials Letters, 52 (2002) 29–33.