Vacancy Detection by Elemental Diffusion
- Practical Electron Microscopy and Database -
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It is well-known that antimony (Sb) in silicon (Si) diffuses via vacancies. [1] Therefore, by combining the observation of diffusion enhancement of Sb in Si substrate during cobalt silicidation, Honeycutt et al. [2] concluded that cobalt silicidation generates Si vacancies in the adjacent Si region that is in contact with cobalt disilicide layer.

 

 

[1] P. Fahey, G. Barbuschia, M. Moslehi, and R. W. Dutton, Appl. Phys. Lett. 46, 784 (1985).
[2] J. W. Honeycutt and G. A. Rozgonyi, Appl. Phys. Lett. 58, 1302 (1991).

 

 

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