This book (Practical Electron Microscopy and Database) is a reference for TEM and SEM students, operators, engineers, technicians, managers, and researchers.
 

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In band gap of polycrystalline silicon, the electrical activity of grain boundary depends on the atomic structure of grain boundary since the dangling-bonds or extra bonds generates deep-level states in the band gap. [1, 2]

[1] W. B. Jackson, N. M. Johnson and D. K. Biegelsen: Appl. Phys. Lett. 43 (1983) 195 - 197.
[2] D. Jousse, S. L. Delage and S. S. Iyer: Phil. Mag. B 63 (1991) 443 - 455.