Barriers for Copper Interconnections
- Practical Electron Microscopy and Database -
- An Online Book -

http://www.globalsino.com/EM/  



 
This book (Practical Electron Microscopy and Database) is a reference for TEM and SEM students, operators, engineers, technicians, managers, and researchers.
 

=================================================================================

Table 2901. Performance of barriers for copper interconnections.

Sample Barrier Stability Deposition condition Reference  
Si/TiW (100 nm)/Cu 725 °C, 30 sec In-situ Cu on TiW
[1]
 
Si/TiW (100 nm)/Cu 775 °C, 30 sec Air between Cu and TiW
[1]
 
Si/TiNx (50 nm)/Cu 600 °C, 1 h Sputtering
[2]
 
Si/TiN (50 nm)/Cu 550 °C, 1 h CVD
[3]
 
Si/TiN (50 nm)/Cu 650 °C, 1 h Plasma treated CVD
[3]
 
Si/Ta (60 nm)/Cu 600 °C, 1 h Sputtering
[4]
 
Si/Ta (50 nm)/Cu 550 °C, 30 min Sputtering
[5]
 
Si/Ta2N (50 nm)/Cu > 650 °C, 30 min Sputtering
[5]
 
Si/TaN (100 nm)/Cu 750 °C, 1 h Sputtering
[6]
 
Si/TiSi2 (30 nm)/
Ta–Si–N (80 nm) /Cu
900 °C, 30 min Sputtering
[7]
 
Si/W (25 nm)/Cu 650 °C, 30 min Sputtering
[8]
 
Si/W2N (25 nm)/Cu 790 °C, 30 min Sputtering
[8]
 
Si/WN (25 nm)/Cu 500 °C, 30 min Sputtering
[8]
 
Si/WNx (20 nm)/Cu > 550 °C, 30 min PECVD
[9]
 

 

 

 

[1] S.-Q. Wang, S. Suthar, C. Hoeflich, and B. J. Burrow, J. of Appl. Phys. 73 (5), 2301–2321 (1993).
[2] J. O. Olowolafe, J. Li, J. W. Mayer, and E. G. Colgan, Appl. Phys. Lett. 58 (5), 469–471 (1991).
[3] D.-H. Kim, S.-L. Cho, K.-B. Kim, J. J. Kim, J. W. Park, and J. J. Kim, Appl. Phys. Lett. 69 (27), 4182–4184 (1996).
[4] H. Ono, T. Nakano, and T. Ohta, Appl. Phys. Lett. 64 (12), 1511–1513 (1994).
[5] K. Holloway, P. M. Fryer, C. Cabral, Jr., J. M. E. Harper, P. J. Bailey, and K. H. Kelleher, J. Appl. Phys. 71 (11), 5433–5443 (1992).
[6] M. Takeyama, A. Noya, T. Sase, A. Ohta, and K. Sasaki, J. of Vacuum Science & Technology B (Microelectronics and Nanometer Structures) 14 (2), 674–678 (1996).
[7] E. Kolawa, J. S. Chen, J. S. Reid, P. J. Pokela, and M.-A. Nicolet, J. of Appl. Phys. 70 (3), 1369–1373 (1991).
[8] T. Oku, M. uekubo, E. Kawakami, K. Nii, T. Nakano, T. Ohta, and M. Murakami, in 1995 IEEE VMIC Conf., pp. 182–185.
[9] J. P. Lu, Q. Z. Hong, W. Y. Hsu, G. A. Dixit, V. Cordasco, S. W. Russell, J. D. Lutttner, R. H. Havemann, L. K. Magel, and H. L. Tsai, in Advanced Metallization and Interconnect Systems for ULSI Applications (Oct. 1997).

 

 

 

=================================================================================

The book author (Yougui Liao) welcomes your comments, suggestions, and corrections, please click here for submission. You can click How to Cite This Book to cite this book. If you let book author know once you have cited this book, the brief information of your publication will appear on the “Times Cited” page.



 
 
 
Copyright (C) 2006 GlobalSino, All Rights Reserved