Bamboolike Microstructure in Interconnects in ICs
- Practical Electron Microscopy and Database -
- An Online Book -

http://www.globalsino.com/EM/  



 
This book (Practical Electron Microscopy and Database) is a reference for TEM and SEM students, operators, engineers, technicians, managers, and researchers.
 

=================================================================================

The grains in Cu interconnects in ICs normally span the entire linewidth at linewidths of less than 2 µm (called bamboolike microstructure). In this case, Cu in electromigration (EM) processes migrates at the interface between Cu and the dielectric diffusion barrier because these grains act as blocking grains. However, no blocking grain exists in the linewidths of 4–6 µm (the Cu microstructure is in polycrystalline phase). In this case, Grain boundary and/or interface diffusion can occur in the EM process. SIM images in Figure 2904 show the microstructures of the Cu interconnects with Ta liner: (a) Cu linewidth of 0.8 µm (bamboolike microstructure), and (b) Cu linewidth of 6 µm (polycrystalline).

SIM images of the Cu interconnects with Ta liner

Figure 2904. SIM images of the Cu interconnects with Ta liner: (a) Cu linewidth of 0.8 µm (bamboolike microstructure), and (b) Cu linewidth of 6 µm (polycrystalline). Adapted from [1]

 

 

 

 

 

[1] T. Usui, H. Nasu, T. Watanabe, H. Shibata, T. Oki, and M. Hatano, Electromigration diffusion mechanism of electroplated copper and cold/hot two-step sputter-deposited aluminum-0.5-wt % copper damascene interconnects, J. Appl. Phys. 98, 063509 (2005).

 

 

=================================================================================

The book author (Yougui Liao) welcomes your comments, suggestions, and corrections, please click here for submission. You can click How to Cite This Book to cite this book. If you let book author know once you have cited this book, the brief information of your publication will appear on the “Times Cited” page.



 
 
 
Copyright (C) 2006 GlobalSino, All Rights Reserved