This book (Practical Electron Microscopy and Database) is a reference for TEM and SEM students, operators, engineers, technicians, managers, and researchers.
 

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Inada and Zhu, et al. [1] obtained high-resolution secondary electron microscopy (HRSEM) images of silicon (Si) TEM specimens along (110) direction, taken in a HD 2700C electron microscope using a 0.1 nm scanning probe with a C_s corrector. Figure 2940 shows the lattice fringes of a HRSEM image taken from a TEM specimen covered with a 3 nm amorphous layer induced by FIB specimen preparation. The speckle contrast is due to variation in thickness of the 3-nm amorphous layer. They also found visible lattice fringes in very low intensity for a specimen with an amorphous Si layer of 8 nm thick, while there was only a little atomic contrast in the (110) lattice for a specimen with an amorphous Si layer of 28 nm thick.

Figure 2940. HRSEM image of a Si TEM specimen along (110) direction. Adapted from [1]

[1]  H. Inada, D.Su, R. F. Egerton, M.Konno, L.Wu, J.Ciston, J.Wall, Y.Zhu, Atomic imaging using secondary electrons in a scanning transmission electron microscope: Experimental observations and possible mechanisms, Ultramicroscopy 111(2011)865–876.