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Non-Ohmic Contact Failure in ICs - Practical Electron Microscopy and Database - - An Online Book - |
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| Microanalysis | EM Book https://www.globalsino.com/EM/ | ||||||||
| This book (Practical Electron Microscopy and Database) is a reference for TEM and SEM students, operators, engineers, technicians, managers, and researchers. | ||||||||
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For memory ICs (integrated circuits), electrical opens can be caused by dangling contacts of bitlines and PMOS [1,2] and are normally on the order of a tenth of a micron or larger.
[1] Z.G. Song, G. Qian, J.Y. Dai, Z.R. Guo, S.K. Loh, C.S.
Teh, S. Redkar, Application of contact-level ion-beam
induced passive voltage contrast in failure analysis of static
random access memory, in: Proceedings of the Eighth
International Symposium on the Physical and Failure
Analysis of Integrated Circuits, IPFA, Singapore, 2001, p.
103.
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| The book author (Yougui Liao) welcomes your comments, suggestions, and corrections, please click here for submission. If you let book author know once you have cited this book, the brief information of your publication will appear on the “Times Cited” page. | ||||||||
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