Electron microscopy
Problems in Poly-Si Gate in ICs
- Practical Electron Microscopy and Database -
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This book (Practical Electron Microscopy and Database) is a reference for TEM and SEM students, operators, engineers, technicians, managers, and researchers.


Up-shift of threshold voltage in MOS structure can occur due to local depletion in the poly-Si gate [1].






[1] Shuji Ikeda, Yasuko Yoshida, Koichiro Ishibashi, Yasuhiro Mitsui, IEEE Trans. Electron. Dev. 50 (5) (2003) 1270–1276.



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