Spacers in MOSFET Structures
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The three-window EFTEM settings listed in Table 3388 were used to take Si images in a MOSFET structure as shown in Figure 3388. Note that in those images, SiO2 and Si3N4 can be distinguished without mapping O and N elements. It is clearly shown that the polycrystalline Si gate (a) is separated by a thin dielectric layer (b) from the single crystalline Si (c). The spacers (d) consisting of two different types of material can be seen on both sides of the gate. Between the polycrystalline gate and the single crystalline Si, the gate oxide layer is also seen clearly. The spacers consist of two layers, namely a thin SiO2 layer and a thicker Si3N4 layer. Note that the bright contrast at the top of image (c) can be an artifact because of the signal of some elements overlapping the Si energy windows of SiO2.

TEM bright field image and ELNES Si maps of the MOSFET structure: (a) TEM bright field image; (b) Si map; (c) Si map in SiO2; (d) Si map in Si3N4

Figure 3388. TEM bright field image and ELNES Si maps of the MOSFET structure: (a) TEM bright field image; (b) Si map; (c) Si map in SiO2; (d) Si map in Si3N4. [1]

Table 3388. The imaging filter settings of EFTEM for Si, SiO2 and Si3N4. [1]

Compound Pre-edge window 1 (eV) Pre-edge window 2 (eV) Post-edge window (eV) Slit width (eV)
Si
73
87
119
20
SiO2
110
125
143
5
Si3N4
107
110
114
3

 

 

 

 

 

 

 

 

 

 

 

 

[1] M. Worch, H.J. Engelmann, W. Blum, E. Zschech, Cross-sectional thin film characterization of Si compounds in semiconductor device structures using both elemental and ELNES mapping by EFTEM, Thin Solid Films 405 (2002) 198–204.

 

 

 

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