Dependence of EDS on Accelerating Voltages of Incident Electrons
- Practical Electron Microscopy and Database -
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This book (Practical Electron Microscopy and Database) is a reference for TEM and SEM students, operators, engineers, technicians, managers, and researchers.


On the one hand, similar to EELS, the peak-to-background ratio (P/B ratio) in EDS increase with the accelerating voltages from 100 kV to 400 kV, resulting in an increase in the detection sensitivity of any trace elements; but on the other hand, low accelerating voltage electron beams can enhance the sensitivities for both EELS and EDS because the reduced the acceleration voltage increases the ionization cross-section, which is determined by the overvoltage ratio.

Furthermore, the spatial resolution for both the EDS and EELS analyses is improved with the accelerating voltages, since the incident electron beam spread decreases with an increase in the accelerating voltage.




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