HAADF Z-contrast STEM Images of Yttrium-based Materials
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Figure 3445 shows high-resolution HAADF Z-contrast STEM images presenting the interface between Si3N4 matrix (on the top of each image) and the mixtures (at the bottom of each image) of  Yb2O3 and Al2O3 (a) and  Yb2O3 and SiO2 (b). The relatively heavy Yb atoms (Z=70), visible here as bright spots due to enhanced electron scattering (giving higher Z-contrast), are located periodically along the interface. The images are oriented along the low-index zone axis [0001] of Si3N4.

High-resolution STEM images showing the atomic interface between a Si3N4 matrix grain, oriented along the low-index zone axis [0001], and two different mixtures

Figure 3445. High-resolution STEM images showing the atomic interface between a Si3N4 matrix
grain and two different mixtures. Adapted from [1]

 

 

 

[1] A. Ziegler, M. K. Cinibulk, C. Kisielowski, and R. O. Ritchie, Atomic-scale observation of the grain-boundary structure of Yb-doped and heat-treated silicon nitride ceramics, Appl. Phys. Lett. 91, 141906 (2007).

 

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