Argon Implantation Occurring in TEM Sample Milling Process
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An Ar (argon)-implanted damaged layer was observed in Ar-ion-milled silicon (Si) TEM specimens [1]. This damaged layer induced asymmetric dark-field rocking curves and thus modified the intensity of most of the diffracted beams. Such phenomenon was also identified in Ar-milled diamond TEM film [2].

 

 

 

 

[1] R. Vincent, T. D. Walsh, M. Pozzi, Ultramicroscopy 76 (1999) 125.
[2] D. M. Bird, J. C. Walmsley, R. Vincent, EMAG 83, Institute of Physics. Conference. Series. No 68, 1983, p. 41.

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