Practical Electron Microscopy and Database

Chapter/Index: Introduction | A | B | C | D | E | F | G | H | I | J | K | L | M | N | O | P | Q | R | S | T | U | V | W | X | Y | Z | Appendix

Dependence of Dopant Contrast in Si on Accelerating Voltage of Primary Electrons in SEM

Higher charge density induces higher Ebi values, and vice versa. For the case (c) in Figure 4464, the upper threshold value for the accelerating voltage is ~2 keV. Above this value, the dopant contrast disappears, as confirmed experimentally [1].             [1] Contribution of dynamic charging effects into dopant contrast mechanisms in silicon, Yuli Chakk, Dror Horvitz, J Mater Sci (2006) 41:4554–4560.