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Dependence of Dopant Contrast in Si on
Accelerating Voltage of Primary Electrons in SEM
- Practical Electron Microscopy and Database -
- An Online Book -
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https://www.globalsino.com/EM/
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This book (Practical Electron Microscopy and Database) is a reference for TEM and SEM students, operators, engineers, technicians, managers, and researchers.
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Higher charge density induces higher Ebi values, and vice versa. For the case (c) in Figure 4464, the upper threshold value for the accelerating voltage is ~2 keV. Above this value, the dopant contrast disappears, as confirmed experimentally [1].
[1] Contribution of dynamic charging effects into dopant contrast mechanisms in silicon, Yuli Chakk, Dror Horvitz, J Mater Sci (2006) 41:4554–4560.
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