Chapter/Index: Introduction | A | B | C | D | E | F | G | H | I | J | K | L | M | N | O | P | Q | R | S | T | U | V | W | X | Y | Z | Appendix
| Methyl cyclopentadienyl trimethyl platinum {(CH3)3Pt(CpCH3)} precursor gas can be used for Pt deposition. The deposited film contains carbon and gallium elements because they exist in the precursor gas or the FIB beam (if a Ga source is used). The C and Ga concentrations are very high so that EDS and EELS can detect them. The EDS results showed that the FIB deposited platinum structures at optimum flux, contain approximately 80% of Pt, 10% of carbon, and 10% of Ga [1].
[1] S. K. Tripathi, N. Shukla, V.N. Kulkarni, Nucl. Instrum. Methods B 266 (2008) 1468.
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