Bandgap Energy for Semiconductor Materials
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Figure 4636a and Table 4636 shows the average energy (radiation ionization energy) required to form one electron-hole pair versus bandgap energy for a number of semiconductor materials.

The average energy required to form one electron-hole pair versus bandgap energy for a number of semiconductor materials

Figure 4636a. The average energy required to form one electron-hole pair versus bandgap energy for a number of semiconductor materials [1].

Table 4636. Properties of Semiconductor Materials. [1]

Figure 4636b shows bandgap and chemical bond length for semiconductors used in visible LEDs (light emitting devices).

Bandgap and chemical bond length for semiconductors used in visible LEDs (light emitting devices)

Figure 4636b. Bandgap and chemical bond length for semiconductors used in visible LEDs (light emitting devices). Adapted from [2]

  Atomic Number (Z) Band Gap (eV) Energy per e-h Pair (eV)   Best γ-Ray Energy Resolution (FWHM)
Si (300 K) 14 1.12 3.61   -
    1.17 @ 77 K      
Ge (77 K) 32 0.74 2.98   420 eV @ 100 keV
          920 eV @ 660 keV
          1300 eV @ 1330 keV
CdTe (300 K) 48-52 1.47 4.43   3800 eV @ 122 keV
          7500 eV @ 661 keV
HgI2 (300 K) 80-53 2.13 6.5   850 eV @ 6 keV
          3500 eV @ 122 keV
GaAs (300 K) 31-33 1.43 4.2   650 eV @ 60 keV
          2600 eV @ 122 keV

 

[1] Glenn F. Knoll, Radiation Detection and Measurement, Wiley (1979).
[2] Ponce, F. A. and Bour, D.P., Nature, 386, (1997) 351.

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