Bandgap Energy for Semiconductor Materials
- Practical Electron Microscopy and Database -
- An Online Book -

http://www.globalsino.com/EM/  



 

 

=================================================================================

Figure 4636a and Table 4636 shows the average energy (radiation ionization energy) required to form one electron-hole pair versus bandgap energy for a number of semiconductor materials.

The average energy required to form one electron-hole pair versus bandgap energy for a number of semiconductor materials

Figure 4636a. The average energy required to form one electron-hole pair versus bandgap energy for a number of semiconductor materials [1].

Table 4636. Properties of Semiconductor Materials. [1]

Figure 4636b shows bandgap and chemical bond length for semiconductors used in visible LEDs (light emitting devices).

Bandgap and chemical bond length for semiconductors used in visible LEDs (light emitting devices)

Figure 4636b. Bandgap and chemical bond length for semiconductors used in visible LEDs (light emitting devices). Adapted from [2]

  Atomic Number (Z) Band Gap (eV) Energy per e-h Pair (eV)
Best γ-Ray Energy Resolution (FWHM)
Si (300 K)
14 1.12 3.61 -
1.17 @ 77 K    
Ge (77 K)
32 0.74 2.98 420 eV @ 100 keV
920 eV @ 660 keV
1300 eV @ 1330 keV
CdTe (300 K)
48-52 1.47 4.43 3800 eV @ 122 keV
7500 eV @ 661 keV
HgI2 (300 K)
80-53 2.13 6.5 850 eV @ 6 keV
3500 eV @ 122 keV
GaAs (300 K)
31-33 1.43 4.2 650 eV @ 60 keV
2600 eV @ 122 keV

Note that at a misfit dislocation, the effective energy gap Eg is reduced. However, line defect self-interstitials in silicon give rise to an energy-loss peak at 2.5 eV, measured by using EELS technique. [3]

 

 

 

[1] Glenn F. Knoll, Radiation Detection and Measurement, Wiley (1979).
[2] Ponce, F. A. and Bour, D.P., Nature, 386, (1997) 351.
[3] Takeda, S., Terauchi, M., Tanaka, M., and Kohyama, M. (1994) Line defect configuration incorporated with self-interstitials in Si: A combined study by HRTEM, EELS and electronic calculation. In Electron Microscopy 1994, Proc. 13th Int. Cong. Electron Microsc., Paris, Vol. 3, pp. 567–568.


=================================================================================