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Comparison among TEM, APT, ToF SIMS and ICP-MS
- Practical Electron Microscopy and Database -
- An Online Book -
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https://www.globalsino.com/EM/
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TEM-EDS/EELS |
APT |
ToF SIMS |
ICP-MS |
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| Spatial resolution |
Excellent (below 0.1 nm) |
Excellent |
Poor |
Poor |
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| Depth resolution |
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Good |
Poor |
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| Detection limit |
Poor (fatal disadvantage) |
Excellent |
Excellent (below 10 ppm) |
Excellent (below 10 ppm) |
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| Artifacts |
Projection artifacts caused by 2D imaging on 3D structure |
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Artifact in smaller structures (<50 nm) due to surface roughness and crater edge effect [1, 2] |
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| Advantages |
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Most suitable analytical technique for interface analysis due to its high depth and spatial resolution and detection limit [3] |
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| Examples |
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Carbon segregation at the interface of the gate oxide and Si substrate in MOSFET structure [page1213] |
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[1] C. G. Pantano, Metals Handbook, Ninth Edition, Vol. 10, 610 (American Society for Metals, Metals Park, OH, 1986).
[2] R. G. Wilson, F. A. Stevie, and C. W. Magee, Secondary Ion Mass Spectrometry (Wiley, New York 1989).
[3] Ju-heon Kim, Euna Ok, Hyunmi Sim, Dongkeun Na, Ho Seok Song, Dae Hyun Kim, Yong-beom Cho, Seok-jun Won, Tae-Soo Park, Samsung Electronics Co., Ltd, Impact of carbon on threshold voltage shift in MOSFET studied by 3D atom probe tomography, Proceedings from the 43rd International Symposium for Testing and Failure Analysis, ISTFA 2017.
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