Practical Electron Microscopy and Database

Chapter/Index: Introduction | A | B | C | D | E | F | G | H | I | J | K | L | M | N | O | P | Q | R | S | T | U | V | W | X | Y | Z | Appendix

Failure Mechanisms of CMOS Shallow Trench Isolation (STI)

Table 1295. Shallow trench isolation (STI) failure mechanisms of CMOS. STI Test polarity Pin pair (stress/reference) Failure mechanism Failure location [1] N+ diffusion diodes Positive VSS Silicide penetration, metallurgical junction, contacts Junction surface, Metallurgical junction edge, contact-to-silicon surface [1] P+ diffusion diedes Positive VDD Silicon melting, TiSi2 salicide resistance, CoSi2 agglomeration, contact N-well under shallow tranch isolation, silicide surface [1] N-well diodes Negative VSS Metallurgical junction failure   [1] N-well to n-well Negative Well-to-well Molten silicon Shallow trench isolation between wells [1] N-channel MOSFET Positive Drain-to-source MOSFET second breakdown Molten silicon, MOSFET channel region [1] Positive Gate Gate dielectric failure MOSFET gate [1] P-channel MOSFET Negative Drain-to-source MOSFET second breakdown Molten silicon, MOSFET channel region [1] Negative MOSFET gate Gate dielectric failure MOSFET gate [1] N-well resistors     Resistor second breakdown Resistor metallurgical junction, contacts [1] N-well ballasted Positive Drain-to-source MOSFET second breakdown Molten silicon [1] N-channel MOSFET Positive Gate Gate dielectric failure MOSFET channel region and gate [1] Aluminum wire interconnect Positive   Aluminum melting Aluminum film [1] Negative   Dielectric cracking Aluminum-ILD interface [1] Tungsten first level Positive Signal pin ILD (inter-layer-dielectric) breakdown Tungsten film-to-polysilicon fill shape, ILD [1] Tungsten stud contact     Tungsten melting Tungsten film, silicon surface [1] Tungsten stud bar contact Positive   Tungsten melting Tungsten film [1] Negative     Silicon surface [1] Copper interconnect Positive   Copper melting Copper film [1] Negative   Dielectric cracking Cracking at the Cu-ILD top surface [1] Copper via Positive   Copper melting Copper film [1] Negative     Cracking at the Cu-ILD top surface [1] Copper dual damascene Positive   Copper film and via Displacement of Cu film and via [1]                     [1] Steven H. Voldman, ESD: Failure Mechanisms and Models, 2009.