Table 1319. Microwave semiconductor devices.
| Device |
Operating frequency |
Bandwidth |
Power output |
Efficiency |
Noise figure |
Operational principle |
| Backward diode |
|
|
|
|
|
Tunneling in reverse-biased junction or near zero bias, high nonlinearity |
| BARITT diode |
4-8 GHz |
Narrow |
Low (mW) |
Low (2%) |
Less noisy than MPATT (<15 dB) |
Barrier injection and transit-time effects |
| Bipolar transistor |
|
|
|
|
|
Electrons and holes participate in transport processes |
| Gunn diode |
1-100 GHz |
2% of centre frequency |
A few watts (CW), 100 - 200 W (Pulsed) |
|
|
|
| IMPATT diode |
0.5-100 GHz |
One-tenth of centre frequency |
1W (CW), 400 W pulsed |
3% CW, 60% pulsed |
High, 30 dB |
Avalanche and transit-time effects to generate high power |
| JFET |
|
|
|
|
|
Majority carrier, current modulated by junction-gate bias |
| MESFET |
|
|
|
|
|
Majority carrier, current modulated by Schottky-gate bias |
| MOSFET |
|
|
|
|
|
Minority-carrier transport in surface inversion channel |
| p-i-n diode |
|
|
|
|
|
Nearly constant capacitance, high breakdown voltage |
| Point-contact diode |
|
|
|
|
|
Small area, small capacitance |
| Schottky diode |
|
|
|
|
|
Majority-carrier transport, thermionic injection |
| TED |
|
|
|
|
|
Electrons transferred from low-energy high-mobility band to high-energy low-mobility band |
| TRAPATT diode |
1-10 GHz |
|
Several 100 W (pulsed) |
20-60% pulsed |
High, 60 dB |
Trapped plasmas avalanche triggered transit diode |
| Tunnel diode |
|
|
|
|
|
Tunneling in forward-biased p*n* junction, negative differential resistance |
| Varactor diode |
|
|
|
|
|
Reactance varies with bias voltage |
