Chapter/Index: Introduction | A | B | C | D | E | F | G | H | I | J | K | L | M | N | O | P | Q | R | S | T | U | V | W | X | Y | Z | Appendix
| An example is that the dislocation densities in the GaN crystals and thin-films are in the order of 1010 cm-3, propagating in the growth direction and cross the active region of the high efficiency light emitting diodes.[1]
[1] F. A. Ponce, J. S. Major, Jr., W. E. Plano, and D. F. Welch, Appl. Phys. Lett. 65, 2303 (1994).
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