This book (Practical Electron Microscopy and Database) is a reference for TEM and SEM students, operators, engineers, technicians, managers, and researchers.
 

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Electromigration in Al can occur under the influence of an electric field in ICs. The electromigration induces voids, resulting in discontinuities, in the metallization runners, that causes circuit opening and/or pileups that can cause short circuit failure to adjacent conductors. The electromigration resistance of Al can be increased by alloying with copper at low concentrations, e.g. ~ 0.5%.